Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application
نویسندگان
چکیده
منابع مشابه
Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application
Resonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on GaAs, as the piezoresistive sensing element, exhibit extremely high sensitivity in the MEMS sensors based on GaAs. To further expand their applications to the fields of MEMS sensors based on Si, we have studied the optimization of the GaAs epitaxy layers on Si wafers. Matching superlattice and strain superlatt...
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ژورنال
عنوان ژورنال: Materials
سال: 2012
ISSN: 1996-1944
DOI: 10.3390/ma5122917